The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Jun. 08, 2009
Chanho Park, Sandy, UT (US);
Chanho Park, Sandy, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method for forming a shielded gate field effect transistor includes the following steps. Trenches are formed in a semiconductor region of a first conductivity type. A shield electrode is formed in a bottom portion of each trench, the shield electrode being insulated from the semiconductor region by a shield dielectric. A gate electrode recessed in each trench is formed over the shield electrode, the gate electrode being insulated from the shield electrode. Using a first mask, a body region of a second conductivity type is formed in the semiconductor region by implanting dopants. Using the first mask, source regions of the first conductivity type are formed in the body region by implanting dopants.