The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Mar. 19, 2009
Jeong-wook Lee, Yongin-si, KR;
Youn-joon Sung, Yongin-si, KR;
Ho-sun Paek, Yongin-si, KR;
Hyun-soo Kim, Yongin-si, KR;
Joo-sung Kim, Yongin-si, KR;
Suk-ho Yoon, Yongin-si, KR;
Jeong-wook Lee, Yongin-si, KR;
Youn-joon Sung, Yongin-si, KR;
Ho-sun Paek, Yongin-si, KR;
Hyun-soo Kim, Yongin-si, KR;
Joo-sung Kim, Yongin-si, KR;
Suk-ho Yoon, Yongin-si, KR;
Samsung LED Co., Ltd., Suwon, Gyunggi-do, KR;
Abstract
Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.