The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Nov. 28, 2003
Daiji Hara, Kanagawa, JP;
Keisuke Yoshida, Yamaguchi, JP;
Daiji Hara, Kanagawa, JP;
Keisuke Yoshida, Yamaguchi, JP;
Tosoh Corporation, Yamaguchi-ken, JP;
Abstract
A material for insulating film suitable as an interlayer insulating material for a semiconductor device, from which an insulating film is formed by chemical vapor deposition, and an insulating film formed from such a material and a semiconductor device employing an insulating film, are provided. A material for insulating film comprising an organosilicon compound which is one of an organosilane compound in which a secondary hydrocarbon group and an alkenyl group, or an alkenyl group, is directly bonded to a silicon atom, or an organosiloxane compound in which a secondary hydrocarbon group and/or an alkenyl group is directly bonded to a silicon atom, represented by the formulae (1) to (4), from which an insulating film is formed by chemical vapor deposition of the organosilicon compound: