The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
May. 30, 2008
Hussein I. Hanafi, Basking Ridge, NJ (US);
Richard Q. Williams, Essex Junction, VT (US);
Hussein I. Hanafi, Basking Ridge, NJ (US);
Richard Q. Williams, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention relates to methods and apparatus for improving the stability of static random access memory (SRAM) cells by using boosted word lines. Specifically, a boosted word line voltage (Vdd') is applied to the word line of a selected SRAM cell, while such a boosted word line voltage (Vdd′) is sufficiently higher than the power supply voltage (Vdd) of the SRAM cell so as to improve the cell stability to a desired level. Specifically, a specific boosted word line voltage is predetermined for each SRAM cell based on the specific cell configuration, by using a circuit simulation program, such as the BERKELEY-SPICE simulation program. A boost voltage generator is then used to apply the predetermined boosted word line voltage to the selected SRAM cell.