The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2011

Filed:

Aug. 02, 2007
Applicants:

Ryo Nakabayashi, Niigata-ken, JP;

Kazumasa Nishimura, Niigata-ken, JP;

Yosuke Ide, Niigata-ken, JP;

Masahiko Ishizone, Niigata-ken, JP;

Masamichi Saito, Niigata-ken, JP;

Naoya Hasegawa, Niigata-ken, JP;

Inventors:

Ryo Nakabayashi, Niigata-ken, JP;

Kazumasa Nishimura, Niigata-ken, JP;

Yosuke Ide, Niigata-ken, JP;

Masahiko Ishizone, Niigata-ken, JP;

Masamichi Saito, Niigata-ken, JP;

Naoya Hasegawa, Niigata-ken, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01);
U.S. Cl.
CPC ...
Abstract

A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.


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