The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Jun. 16, 2009
Applicants:
Chen-jean Chou, New City, NJ (US);
Chun-chen Wu, Hsinchu, TW;
Patrick F. Brinkley, San Jose, CA (US);
Inventors:
Chen-Jean Chou, New City, NJ (US);
Chun-chen Wu, Hsinchu, TW;
Patrick F. Brinkley, San Jose, CA (US);
Assignee:
QUALCOMM MEMS Technologies, Inc., San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.