The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Jun. 26, 2008
Applicants:
Masakazu Goto, Kanagawa, JP;
Makoto Fujiwara, Kanagawa, JP;
Inventors:
Masakazu Goto, Kanagawa, JP;
Makoto Fujiwara, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device according to an embodiment includes: a fin type MOSFET having a first gate electrode, and a first gate insulating film for generating Fermi level pinning in the first gate electrode; and a planar type MOSFET having a second gate electrode, and a second gate insulating film for generating no Fermi level pinning in the second gate electrode, or generating Fermi level pinning weaker than that generated in the first gate electrode in the second gate electrode.