The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Jan. 10, 2007
Applicant:
Piebe A. Zijlstra, Middellar, NL;
Inventor:
Piebe A. Zijlstra, Middellar, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a substrate contact in a semiconductor device, comprising the steps of providing a semiconductor base substrate () having a buried oxide (BOX) layer () and a thin active semiconductor layer () on the BOX layer (), forming a trench () in the active semiconductor layer () and the Box layer () to the semiconductor base substrate () below, and then depositing another active semiconductor (epitoxial) layer () over the remaining active semiconductor layer () and in the trench () to create the substrate contact. The trench () is etched at a location on the wafer corresponding to a scribe lane ().