The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Sep. 21, 2007
Won-joo Kim, Hwaseong-si, KR;
Yoon-dong Park, Yongin-si, KR;
June-mo Koo, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Sung-jae Byun, Yongin-si, KR;
Won-joo Kim, Hwaseong-si, KR;
Yoon-dong Park, Yongin-si, KR;
June-mo Koo, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Sung-jae Byun, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nonvolatile memory device is provided. In the nonvolatile memory device, a semiconductor substrate of a first conductivity type includes first and second fins. A common bit line electrode connects one end of the first fin to one end of the second fin. Control gate electrodes cover the first and second fins and expand across the top surface of each of the first and second fins. A first string selection gate electrode positioned between the common bit line electrode and the control gate electrodes may cover the first and second fins and expand across the top surface of each of the first and second fins. A second string selection gate electrode positioned between the first string selection gate electrode and the control gate electrodes may cover the first and second fins and expand across the top surface of each of the first and second fins.