The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Jan. 29, 2009
Masahiro Kato, Komaki, JP;
Kazunori Masukawa, Komaki, JP;
Yo Watanabe, Komaki, JP;
Masahito Yamaguchi, Nagoya, JP;
Koichi Tani, Nagoya, JP;
Masahiro Kato, Komaki, JP;
Kazunori Masukawa, Komaki, JP;
Yo Watanabe, Komaki, JP;
Masahito Yamaguchi, Nagoya, JP;
Koichi Tani, Nagoya, JP;
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
National University Corporation Nagoya University, Aichi, JP;
Abstract
An infrared detector comprises: a reflection portion transmitting far- and middle-infrared rays and reflecting near-infrared and visible rays; a photo-current generating portion having a quantum well structure in which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a quantum well structure into which electrons of the photo-current generated by the photo-current generating portion are injected and the electrons thus injected thereinto are recombined with holes, thus emitting near-infrared and visible rays; and a photo-detecting portion detecting the near-infrared and visible rays emitted from the light emitting portion, and detecting the near-infrared and visible rays emitted from the light emitting portion and reflected by the reflection portion. The reflection portion, the photo-current generating portion, and the light emitting portion are made of group III-V compound semiconductors layered on a semiconductor substrate.