The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2011

Filed:

Apr. 03, 2008
Applicants:

Kuo-jui Chang, Hsinchu County, TW;

Meei-yu Hsu, Kaohsiung, TW;

Feng-yu Yang, Taichung County, TW;

Inventors:

Kuo-Jui Chang, Hsinchu County, TW;

Meei-Yu Hsu, Kaohsiung, TW;

Feng-Yu Yang, Taichung County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/469 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating an electronic device is provided. The method for fabricating the electrical device comprises providing a substrate. A patterned first self-assembled monolayer (SAM) and an adjacent patterned second SAM are formed on the substrate, wherein the patterned first SAM has a higher affinity then that of the patterned second SAM. A conductive, semiconductor or insulating material is dissolved or suspended in a solvent to form a solution. The solution is coated on the substrate. The solvent in the solution is removed to selectively form a patterned conductive, semiconductor or insulating layer on the patterned first SAM.


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