The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7932159 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 26, 2011

Filed:

Nov. 10, 2010
Applicant:

Cha Deok Dong, Icheon-si, KR;

Inventor:

Cha Deok Dong, Icheon-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to flash memory devices and a method of fabricating the same. In an aspect of the present invention, the flash memory device includes trenches formed in a semiconductor substrate and having a step at their lower portion, a tunnel insulating layer formed in an active region of the semiconductor substrate, first conductive layers formed on the tunnel insulating layer, an isolation layer gap-filling between the trenches and the first conductive layers, and a second conductive layer formed on the first conductive layer and having one side partially overlapping with the isolation layers.


Find Patent Forward Citations

Dong, Cha. (2011). Flash memory device and method of fabricating the same (U.S. Patent No. 7932159). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7932159

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…