The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Oct. 26, 2009
Applicants:
Takashi Nakabayashi, Toyama, JP;
Hideyuki Arai, Toyama, JP;
Mitsuo Nissa, Toyama, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8236 (2006.01);
U.S. Cl.
CPC ...
Abstract
A threshold control layer of a second MIS transistor is formed under the same conditions for forming a threshold control layer of a first MIS transistor. LLD regions of the second MIS transistor are formed under the same conditions for forming LDD regions of a third transistor.
Nakabayashi, Takashi. (2011). Semiconductor device and method for fabricating the same (U.S. Patent No. 7932153). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7932153
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile