The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Dec. 22, 2008
Hyoung June Kim, Seoul, KR;
Dong Hoon Shin, Seoul, KR;
Su Kyoung Lee, Seoul, KR;
Jung Min Lee, Seoul, KR;
Wang Jun Park, Seoul, KR;
Sung Ryoung Ryu, Seoul, KR;
Hoon Kim, Seoul, KR;
Hyoung June Kim, Seoul, KR;
Dong Hoon Shin, Seoul, KR;
Su Kyoung Lee, Seoul, KR;
Jung Min Lee, Seoul, KR;
Wang Jun Park, Seoul, KR;
Sung Ryoung Ryu, Seoul, KR;
Hoon Kim, Seoul, KR;
Viatron Technologies Inc., Seoul, KR;
Abstract
A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O) gas or water (HO) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.