The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2011

Filed:

Dec. 30, 2008
Applicants:

Jae-hyun Kim, Gyeonggi-Do, KR;

Bo-hyun Lee, Gyeonggi-Do, KR;

Tae-hyoung Moon, Gyeonggi-Do, KR;

Inventors:

Jae-Hyun Kim, Gyeonggi-Do, KR;

Bo-Hyun Lee, Gyeonggi-Do, KR;

Tae-Hyoung Moon, Gyeonggi-Do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are layers and patterns of nanowire or nanotube using a chemical self assembly for forming a semiconductor layer and a conductive layer of a thin film transistor by using a nanowire and/or nanotube solution and an diamine-based self-assembled monolayer (SAM) material. The Layers and patterns including layers and patterns of nanowire or nanotube using a chemical self assembly include: a substrate having a surface terminated with amine group (—NH) by using a chemical self-assembled monolayer (SAM) material having at least one end terminated with amine group (—NH); and a first nanowire or nanotube layer ionically coupled to the amine group (—NH) of the surface of the substrate.


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