The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Aug. 23, 2010
Carmen S. Menoni, Fort Collins, CO (US);
Jorge J. Rocca, Fort Collins, CO (US);
Georgiy Vaschenko, San Diego, CA (US);
Scott Bloom, Encinitas, CA (US);
Erik H. Anderson, El Cerrito, CA (US);
Weilun Chao, El Cerrito, CA (US);
Oscar Hemberg, Stockholm, SE;
Carmen S. Menoni, Fort Collins, CO (US);
Jorge J. Rocca, Fort Collins, CO (US);
Georgiy Vaschenko, San Diego, CA (US);
Scott Bloom, Encinitas, CA (US);
Erik H. Anderson, El Cerrito, CA (US);
Weilun Chao, El Cerrito, CA (US);
Oscar Hemberg, Stockholm, SE;
Colorado State University Research Foundation, Fort Collins, CO (US);
The Regents of University of California, Oakland, CA (US);
JMAR Technologies, Inc., San Diego, CA (US);
Abstract
Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.