The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2011

Filed:

Sep. 22, 2006
Applicants:

Seung-moon Yoo, Santa Clara, CA (US);

Myung Chan Choi, San Jose, CA (US);

Young Tae Kim, San Jose, CA (US);

Sung Ju Son, Santa Clara, CA (US);

Sang-kyun Han, Sunnyvale, CA (US);

Sun Hyoung Lee, Seoul, KR;

Inventors:

Seung-Moon Yoo, Santa Clara, CA (US);

Myung Chan Choi, San Jose, CA (US);

Young Tae Kim, San Jose, CA (US);

Sung Ju Son, Santa Clara, CA (US);

Sang-Kyun Han, Sunnyvale, CA (US);

Sun Hyoung Lee, Seoul, KR;

Assignee:

Zmos Technology, Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

Circuits and methods for suppressing integrated circuit leakage currents are described. Many of these circuits and methods are particularly well-suited for use in dynamic memory circuits. Examples describe the use of power, ground, or both and power and ground source transistors used for generating virtual voltages. An aspect of the invention describes lowering refresh current. An aspect describes reducing the standby current. An aspect of the invention describes lowering leakage resulting from duplicated circuits, such as row decoders and word line drivers. An aspect describes methods of performing early wake-up of source transistors. A number of source transistor control mechanisms are taught. Circuit layouts methods are taught for optimizing integrated circuit layouts using the source transistors.


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