The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Oct. 06, 2009
Ashot Melik-martirosian, Sunnyvale, CA (US);
Ashot Melik-Martirosian, Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method and apparatus are provided for adaptive memory cell overerase compensation. A semiconductor memory device () is provided for performing the adaptively compensating erase verify operation (). The memory device () includes at least one word line (). One or more memory cells () and one or more reference cells () are connected to the word lines (), where the one or more reference cells () include an erased reference cell () connected to each word line (). The method () for adaptive memory cell overerase compensation includes determining an erase verify gate voltage () utilizing the erased reference cell(s) () and verifying an erase voltage () of the memory cells () in response to the erase verify gate voltage ().