The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Feb. 24, 2009
Michele M. Franceschini, White Plains, NY (US);
John P. Karidis, Ossining, NY (US);
Luis A. Lastras, Cortlandt Manor, NY (US);
Michele M. Franceschini, White Plains, NY (US);
John P. Karidis, Ossining, NY (US);
Luis A. Lastras, Cortlandt Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques for reading phase change memory that mitigate resistance drift. One contemplated method includes apply a plurality of electrical input signals to the memory cell. The method includes measuring a plurality of electrical output signals from the memory cell resulting from the plurality of electrical input signals. The method includes calculating an invariant component of the plurality of electrical output signals dependent on the configuration of amorphous material in the memory cell. The method also includes determining a memory state of the memory cell based on the invariant component. In one embodiment of the invention, the method further includes mapping the plurality of electrical output signals to a measurements region of a plurality of measurements regions. The measurements regions correspond to memory states of the memory cell.