The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Aug. 14, 2008
Xinyu Zheng, Monterey Park, CA (US);
Bedabrata Pain, Los Angeles, CA (US);
Thomas J. Cunningham, Pasadena, CA (US);
Xinyu Zheng, Monterey Park, CA (US);
Bedabrata Pain, Los Angeles, CA (US);
Thomas J. Cunningham, Pasadena, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.