The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Mar. 11, 2008
Naohiro Ueda, Hyogo, JP;
Naohiro Ueda, Hyogo, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A disclosed semiconductor device includes a MOS transistor that causes no problems concerning the formation of a thick gate insulating film and that is applicable to high withstand voltage devices. A drain region has a double diffusion structure including an N-drain regionand an N+ drain region. A gate electrode includes a first gate electrodeformed on an insulating filmand a second gate electrodeformed on the first gate electrodevia a gate electrode insulating film. Between the gate insulating filmand the N+ source region, a field insulating filmis disposed, over which an edge of the first gate electrodeis disposed. A gate voltage applied to the second gate electrodevia a gate wiringis divided between the gate insulating filmand the gate electrode insulating film