The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Nov. 19, 2007
Shunpei Yamazaki, Setagaya, JP;
Hisashi Ohtani, Atsugi, JP;
Toru Mitsuki, Atsugi, JP;
Akiharu Miyanaga, Atsugi, JP;
Yasushi Ogata, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Hisashi Ohtani, Atsugi, JP;
Toru Mitsuki, Atsugi, JP;
Akiharu Miyanaga, Atsugi, JP;
Yasushi Ogata, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.