The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2011

Filed:

Dec. 26, 2007
Applicants:

Akane Masumoto, Yokohama, JP;

Toshihiro Kikuchi, Yokohama, JP;

Noboru Ono, Matsuyama, JP;

Hidemitsu Uno, Matsuyama, JP;

Hiroko Nakashima, Matsuyama, JP;

Inventors:

Akane Masumoto, Yokohama, JP;

Toshihiro Kikuchi, Yokohama, JP;

Noboru Ono, Matsuyama, JP;

Hidemitsu Uno, Matsuyama, JP;

Hiroko Nakashima, Matsuyama, JP;

Assignees:

Canon Kabushiki Kaisha, Tokyo, JP;

Ehime University, Ehime-ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09B 47/04 (2006.01); C07D 487/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of producing an organic semiconductor device is provided in which a layer composed of an organic semiconductor having excellent crystallinity and orientation in a low-temperature region can be formed, and the device can be produced in the air. The method includes forming a layer composed of an organic semiconductor precursor on a base body and irradiating the organic semiconductor precursor with light, wherein the organic semiconductor precursor is a porphyrin compound or an azaporphyrin compound having in its molecule at least one of the structure represented by the following general formula (1) or (2):


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