The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2011

Filed:

Aug. 15, 2007
Applicants:

Hidekazu Miyairi, Kanagawa, JP;

Yasuhiro Jinbo, Kanagawa, JP;

Eiji Higa, Kanagawa, JP;

Shunpei Yamazaki, Tokyo, JP;

Inventors:

Hidekazu Miyairi, Kanagawa, JP;

Yasuhiro Jinbo, Kanagawa, JP;

Eiji Higa, Kanagawa, JP;

Shunpei Yamazaki, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a light absorption layer including a material which absorbs a laser beam. The mask is formed by irradiating the light absorption layer with a laser beam through a photomask and utilizing laser ablation by energy of the laser beam absorbed by the light absorption layer.


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