The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Nov. 25, 2005
Aurélie Tauzin, St Martin le Vinoux, FR;
Chrystelle Lagahe-blanchard, St. Joseph de Riviere, FR;
Aurélie Tauzin, St Martin le Vinoux, FR;
Chrystelle Lagahe-Blanchard, St. Joseph de Riviere, FR;
COMMISSARIAT a l'Energie Atomique, Paris, FR;
Abstract
The invention concerns a method for forming a growth mask on the surface of an initial crystalline substrate, comprising the following steps: the method being characterized in that the formation of the pattern is obtained by ion implantation carried out in the surface layer of the initial substrate underlying the layer of second material, the implantation conditions being such that they cause, directly or after a heat treatment, on said face of the initial substrate, the appearance of exfoliated zones of first material leading to the localized removal of the zones of second material covering the exfoliated zones of first material, thereby locally exposing the initial substrate and forming growth windows on the initial substrate. The invention further concerns methods for forming a crystalline thin film and transferring this thin film onto a host substrate.