The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
May. 22, 2008
Deok-kee Kim, Bedford Hills, NY (US);
Seong-dong Kim, LaGrangeville, NY (US);
Oh-jung Kwon, Hopewell Junction, NY (US);
Deok-Kee Kim, Bedford Hills, NY (US);
Seong-Dong Kim, LaGrangeville, NY (US);
Oh-Jung Kwon, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The embodiments of the invention provide a device, method, etc. for a dual stress STI. A semiconductor device is provided having a substrate with a first transistor region and a second transistor region different than the first transistor region. The first transistor region comprises a PFET; and, the second transistor region comprises an NFET. Further, STI regions are provided in the substrate adjacent sides of and positioned between the first transistor region and the second transistor region, wherein the STI regions each comprise a compressive region, a compressive liner, a tensile region, and a tensile liner.