The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Dec. 10, 2007
Viet Nguyen Hoang, Leuven, BE;
Martinus T. Bennebroek, Den Bosch, NL;
Viet Nguyen Hoang, Leuven, BE;
Martinus T. Bennebroek, Den Bosch, NL;
NXP B.V., Eindhoven, NL;
Abstract
The invention relates to a method of manufacturing openings in a substrate (), the method comprising steps of: providing the substrate () with a masking layer () on a surface thereof; forming a first opening (), a second opening (), and a channel () in between the first opening () and the second opening () in the masking layer (), the channel () connecting the first opening () with the second opening (), the second opening () having an area (A) that is larger than the area (A) of the first opening (); forming trenches () in the substrate () located at the first opening (), the second opening (), and at the channel () under masking of the masking layer () by means of anisotropic dry etching, and sealing off the trench () located at the channel () for forming the openings in the substrate (). The method of the invention enables formation of a deeper first opening () than what is possible with the known methods. The invention further relates to a method of manufacturing a via in a substrate (), which may be advantageously used in 3-dimensional integrated circuits.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile