The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Feb. 12, 2010
Dae Jin Park, Icheon-Si, KR;
Dae Jin Park, Icheon-Si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A disclosed selective etching method comprises mixing a polymer with carbon nanotubes, applying the mixture to an etching target layer to form a carbon nanotube-polymer composite layer, forming a hard mask by patterning the carbon nanotube-polymer composite layer, such that a part of the etching target layer is selectively exposed, and selectively etching the etching target layer exposed through the hard mask. The polymer preferably includes a photoresist. Also disclosed is a method for forming an isolation structure of a memory device using the selective etching method.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile