The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
May. 28, 2008
Miwako Akiyama, Hachioji, JP;
Yusuke Kawaguchi, Kanagawa, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing semiconductor devices comprises forming an semiconductor layer of the first conduction type on a substrate of the first conduction type; forming an anti-oxidizing layer on the surface of the semiconductor layer of the first conduction type, the anti-oxidizing layer having an aperture only through a region for use in formation of a guard ring layer of the second conduction type; forming the guard ring layer of the second conduction type in the surface of the semiconductor layer of the first conduction type through implantation of ions into a surface where said anti-oxidizing layer is formed; forming an oxide layer at least in the aperture; forming a base layer of the second conduction type adjacent to the guard ring layer of the second conduction type in the surface of the semiconductor layer of the first conduction type; and forming a diffused layer of the first conduction type through implantation of ions into the base layer of the second conduction type.