The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Feb. 08, 2007
Han-mei Choi, Seoul, KR;
Chang-hyun Lee, Gyeonggi-do, KR;
Seung-hwan Lee, Suwon-si, KR;
Young-geun Park, Gyeonggi-do, KR;
Sung-jung Kim, Gyeonggi-do, KR;
Young-sun Kim, Gyeonggi-do, KR;
Han-Mei Choi, Seoul, KR;
Chang-Hyun Lee, Gyeonggi-do, KR;
Seung-Hwan Lee, Suwon-si, KR;
Young-Geun Park, Gyeonggi-do, KR;
Sung-Jung Kim, Gyeonggi-do, KR;
Young-Sun Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a floating trap type nonvolatile memory device includes forming a cell gate insulating layer on a semiconductor substrate, the cell gate insulating layer being comprised of a lower insulating layer, a charge storage layer and an upper insulating layer sequentially stacked; thermally annealing the cell gate insulating Layer at a temperature of approximately 810° C. to approximately 1370° C.; and forming a gate electrode on the thermally annealed cell gate insulating layer.