The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Feb. 10, 2010
Min Zou, Fayetteville, AR (US);
LI Cai, Fayetteville, AR (US);
William David Brown, Fayetteville, AR (US);
Min Zou, Fayetteville, AR (US);
Li Cai, Fayetteville, AR (US);
William David Brown, Fayetteville, AR (US);
Board of Trustees of the University of Arkansas, Little Rock, AR (US);
Abstract
One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an Nenvironment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.