The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2011

Filed:

Mar. 29, 2005
Applicants:

Angela T. Hui, Fremont, CA (US);

Ning Cheng, San Jose, CA (US);

Minh Van Ngo, Fremont, CA (US);

Hirokazu Tokuno, Cupertino, CA (US);

Wenmei LI, Sunnyvale, CA (US);

Inventors:

Angela T. Hui, Fremont, CA (US);

Ning Cheng, San Jose, CA (US);

Minh Van Ngo, Fremont, CA (US);

Hirokazu Tokuno, Cupertino, CA (US);

Wenmei Li, Sunnyvale, CA (US);

Assignees:

Spansion LLC, Sunnyvale, CA (US);

GlobalFoundries Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 1/10 (2006.01); G02B 5/28 (2006.01); B32B 9/00 (2006.01); B32B 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A film stack includes an interlayer dielectric formed over one or more devices. The film stack further includes a first layer having a high extinction coefficient formed on the interlayer dielectric and a second layer having a low extinction coefficient formed on the first layer. The first and second layers prevent ultraviolet induced damage to the one or more devices while minimizing reflectivity for lithographic processes.


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