The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Apr. 12, 2007
Sakari Ruppi, Fagarsta, SE;
Sakari Ruppi, Fagarsta, SE;
Seco Tools AB, Fagersta, SE;
Abstract
Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimizing the grain size and microstructure. This invention describes a method to obtain controlled, fine, equiaxed grain morphology in Ti(C,N) layers produced using moderate temperature CVD (MTCVD). The method includes the step of doping using CO, CO, ZrC1and A1C1or combinations of these to control the grain size and shape. Doping has to be controlled carefully in order to avoid nanograined structures and oxidization. Doping is further controlled to produce grain size that is from about 50 to about 300 nm, preferably from about 50 to about 150; a lack of any strong preferred growth orientation; and a length-to-width ratio (L/W) of less than 3 and only with a slight to moderate XRD line broadening.