The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Oct. 05, 2007
Applicants:
Yang Wei, Beijing, CN;
Lin Xiao, Beijing, CN;
Feng Zhu, Beijing, CN;
Jie Tang, Beijing, CN;
Liang Liu, Beijing, CN;
Shou-shan Fan, Beijing, CN;
Inventors:
Assignees:
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., Tu-Cheng, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/304 (2006.01); H01J 1/30 (2006.01); H01J 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a field emission electron source, the method comprising the steps of: preparing a substrate, a carbon nanotubes slurry, and a conductive slurry; applying a conductive slurry layer onto the substrate; applying a layer of carbon nanotubes slurry onto the conductive slurry layer; and solidifying the substrate under a temperature of 300 to 600 degrees centigrade so as to form the field emission electron source.