The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2011

Filed:

Nov. 28, 2005
Applicants:

Thomas W. Tombler, Jr., Goleta, CA (US);

Jon W. Lai, Santa Barbara, CA (US);

Brian Y. Lim, Simi Valley, CA (US);

Borys Kolasa, Santa Barbara, CA (US);

Inventors:

Thomas W. Tombler, Jr., Goleta, CA (US);

Jon W. Lai, Santa Barbara, CA (US);

Brian Y. Lim, Simi Valley, CA (US);

Borys Kolasa, Santa Barbara, CA (US);

Assignee:

Etamota Corporation, Pasadena, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05C 13/00 (2006.01); D01F 9/133 (2006.01); D01F 9/127 (2006.01);
U.S. Cl.
CPC ...
Abstract

Apparatus and method for synthesizing nanostructures in a controlled process. An embodiment of the apparatus comprises a stage or substrate holder that is heated, e.g., resistively, and is the primary source of heating for the substrate for nanostructure synthesis. The substrate and substrate heater are enclosed in a chamber, e.g., a metal chamber, which is ordinarily at a lower temperature than are the substrate and substrate heater during synthesis. Some embodiments of the invention are particularly useful for chemical vapor deposition (CVD), low pressure CVD (LPCVD), metal organic CVD (MOCVD), and general vapor deposition techniques. Some embodiments of the present invention allow for in situ characterization and treatment of the substrate and nanostructures.


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