The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7924644 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 12, 2011

Filed:

Jan. 02, 2009
Applicants:

Duk-ha Park, Suwon-si, KR;

Ki-whan Song, Yongin-si, KR;

Inventors:

Duk-ha Park, Suwon-si, KR;

Ki-Whan Song, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device includes a memory cell array including a plurality of memory cells, where each memory cell includes a transistor with a floating body region in which majority carriers are accumulated in a steady state. In write and read operations, a first data state corresponding to the steady state is written to and read from at least one selected memory cell of the memory cell array by supplying a first bipolar current through the at least one selected memory cell, and a second data state is written to and read from the at least one selected memory cell by supplying a second bipolar current which is smaller than the first bipolar current through the at least one selected memory cell. In a refresh operation, memory cells of the memory cell array storing the second data state are refreshed.


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