The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Jun. 22, 2009
Kazuyuki Kouno, Osaka, JP;
Hoshihide Haruyama, Kyoto, JP;
Masayoshi Nakayama, Shiga, JP;
Reiji Mochida, Osaka, JP;
Kazuyuki Kouno, Osaka, JP;
Hoshihide Haruyama, Kyoto, JP;
Masayoshi Nakayama, Shiga, JP;
Reiji Mochida, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In a semiconductor memory device, a voltage rise due to IR-DROP is suppressed which occurs when a ground voltage is applied to a memory cell during a program operation. Discharge transistors are provided between the ground and bit lines connected to the source and drain of the memory cell. The discharge transistors receive mutually independent discharge control signals which are generated and outputted from a DS decoder driver at the respective gates thereof. To the bit line which applies the ground voltage to the memory cell, the ground voltage can be set using the discharge transistor.