The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
May. 04, 2006
Paul Van Der Sluis, Eindhoven, NL;
Andrei Mijiritskii, Zaltbommel, NL;
Pierre H. Woerlee, Valkenswaard, NL;
Victor M. G Van Acht, Waalre, NL;
Nicolaas Lambert, Waalre, NL;
Paul Van Der Sluis, Eindhoven, NL;
Andrei Mijiritskii, Zaltbommel, NL;
Pierre H. Woerlee, Valkenswaard, NL;
Victor M. G Van Acht, Waalre, NL;
Nicolaas Lambert, Waalre, NL;
NXP B.V., Eindhoven, NL;
Abstract
A One Time Programmable (OTP) memory cell () comprising a first, metallic layer () coated with a second, conductive stable transition compound () with an insulating layer () there-between. The first and second layers () are selected according to the difference in Gibbs Free Energy between them, which dictates the chemical energy that will be generated as a result of an exothermic chemical reaction between the two materials. The materials of the first and second layers () are highly thermally stable in themselves but, when a voltage is applied to the cell (), a localized breakdown of the insulative layer () results which creates a hotspot () that sets off an exothermic chemical reaction between the first and second layers (). The exothermic reaction generates sufficient heat () to create a short circuit across the cell and therefore reduce the resistance thereof.