The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Dec. 07, 2007
Nobuki Miyakoshi, Hanno, JP;
Nobuki Miyakoshi, Hanno, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device () of the present invention includes: a drift layer () that includes a reference concentration layer () including an impurity of a first conductive type at a first reference concentration and a low concentration layer () provided under the reference concentration layer and including an impurity of the first conductive type at a concentration lower than the first reference concentration; a gate electrode () that is formed on an upper surface of the reference concentration layer; a pair of source regions (Sa and 8) that are respectively provided on the reference concentration layer in the vicinity of ends of the gate electrode and include an impurity of the first conductive type at a concentration higher than the first reference concentration.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile