The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Jan. 17, 2002
Hisashi Yamada, Tsukuba, JP;
Noboru Fukuhara, Tsukuba, JP;
Masahiko Hata, Tsuchiura, JP;
Sumitomo Chemical Company, Limited, Osaka, JP;
Abstract
A thin-film crystal wafer having a pn junction includes a first crystal layer of p GaAs, a second crystal layer of n InAlGaP, the first and second crystal layers being lattice-matched layers that form a heterojunction, and a control layer of a thin-film of InAlGaP differing in composition from the n InAlGaP of the second crystal layer is formed at the interface of the heterojunction. The control layer enables the energy discontinuity at the interface of the InAlGaP/GaAs heterojunction to be set within a relatively broad range of values and thus enables the current amplification factor and the offset voltage to be matched to specification values by varying the energy band gap at the heterojunction.