The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Dec. 03, 2007
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-bae Park, Seoul, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-bae Park, Seoul, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.