The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2011

Filed:

Mar. 27, 2006
Applicant:

Jari Mäkinen, Espoo, FI;

Inventor:

Jari Mäkinen, Espoo, FI;

Assignee:

Okmetic Oyj, Vantaa, FI;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
Abstract

It is shown in the invention a method for manufacturing a semiconductor wafer structure with an active layer for impurity removal, which method comprises phases of depositing a first layer on a first wafer surface for providing an active layer, an optional phase of preparation for said first layer for next phase, growing thermal oxide layer on a second wafer, bonding said first and second wafers into a stack, annealing the stack for a crystalline formation in said thermal oxide layer as a second layer, and thinning said first wafer to a pre-determined thickness. The invention concerns also a wafer manufactured according to the method, chip that utilizes such a wafer structure and an electronic device utilizing such a chip.


Find Patent Forward Citations

Mäkinen, Jari. (2011). Gettering method and a wafer using the same (U.S. Patent No. 7923353). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7923353

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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