The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Sep. 10, 2008
Method of fabricating recess channel transistor having locally thick dielectrics and related devices
Applicants:
Sung-hee Han, Hwaseong-si, KR;
Jin-woo Lee, Yongin-si, KR;
Tae-young Chung, Yongin-si, KR;
Ja-young Lee, Ansan-si, KR;
Inventors:
Sung-Hee Han, Hwaseong-si, KR;
Jin-Woo Lee, Yongin-si, KR;
Tae-Young Chung, Yongin-si, KR;
Ja-Young Lee, Ansan-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a method of fabricating a recess channel transistor and a related semiconductor device. The method may include forming a first gate trench on a substrate, forming a dielectric spacer on a sidewall of the first gate trench, forming a second gate trench on the substrate under the first gate trench, and forming a gate electrode to fill the trenches. The dielectric spacer may remain between the gate electrode and the substrate.