The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2011

Filed:

Dec. 06, 2007
Applicants:

Eun-guk Lee, Yongin-si, KR;

Do-hyun Kim, Seoul, KR;

Chang-oh Jeong, Suwon-si, KR;

Je-hun Lee, Seoul, KR;

Soon-kwon Lim, Yongin-si, KR;

Inventors:

Eun-Guk Lee, Yongin-si, KR;

Do-Hyun Kim, Seoul, KR;

Chang-Oh Jeong, Suwon-si, KR;

Je-Hun Lee, Seoul, KR;

Soon-Kwon Lim, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor substrate and a method of manufacturing the same are disclosed. The method of manufacturing a thin film transistor substrate includes forming a first conductive pattern group including a gate line, a gate electrode, and a lower gate pad electrode on a substrate, forming a gate insulating layer on the substrate on which the first conductive pattern group is formed, forming an oxide semiconductor pattern overlapping the gate electrode on the gate insulating layer, and forming first and second conductive layers on the substrate on which the oxide semiconductor pattern is formed and patterning the first and second conductive layers to form a second conductive pattern group including a data line, a source electrode, a drain electrode, and a data pad.


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