The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2011

Filed:

May. 29, 2006
Applicants:

Toshifumi Yagi, Mie, JP;

Toshihide Tsubata, Mie, JP;

Yoshinori Shimada, Mie, JP;

Inventors:

Toshifumi Yagi, Mie, JP;

Toshihide Tsubata, Mie, JP;

Yoshinori Shimada, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

After forming a gate electrode () in a first step, a gate insulating film (), a semiconductor film () and a conducting film () including a transparent conducting film () are stacked, and on the thus obtained multilayered body (), a resist pattern () including a first opening () for exposing the conducting film () therein and a second opening () having a bottom portion (B) above the gate electrode () is formed. Portions of the conducting film () and the semiconductor film () exposed in the first opening () are etched, the bottom portion (B) of the second opening () is removed for exposing the conducting film () therein, and the exposed conducting film () is etched, so as to form a TFT () in a second step. A pixel electrode (), a protection masking layer () and a projection () are formed in a third step.


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