The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Aug. 25, 2009
Youichi Yatagai, Kanagawa, JP;
Shinji Kawada, Miyagi, JP;
Seiji Samukawa, Sendai, JP;
Oki Semiconductor Co., Ltd., Tokyo, JP;
Abstract
A method of measuring a resistivity of a sidewall of a contact hole formed in a semiconductor device, wherein said semiconductor device includes a first electrode formed on a substrate; a second electrode formed on the first electrode with an insulating film in between; a resist pattern formed on the first electrode and the second electrode; a contact hole formed in the first electrode and the second electrode; and an organic film deposited on the sidewall of the contact hole, includes the steps of: placing a probe needle on the first electrode and the second electrode so that the probe needle contacts with the first electrode and the second electrode several times; establishing electrical conductivity of the probe needle relative to the first electrode and the second electrode; and measuring the resistivity of the organic film between the first electrode and the second electrode.