The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2011

Filed:

May. 07, 2009
Applicants:

Steven Thijs, Willebroek, BE;

Dimitri Linten, Boortmeerbeek, BE;

David Eric Trémouilles, Villeneuve, FR;

Inventors:

Steven Thijs, Willebroek, BE;

Dimitri Linten, Boortmeerbeek, BE;

David Eric Trémouilles, Villeneuve, FR;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/332 (2006.01); H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a MuGFET ESD protection device having a given layout by means of a given manufacturing process, the method comprising selecting multiple interdependent layout and process parameters of which a first set are fixed by said manufacturing process and a second set are variable, selecting multiple combinations of possible layout and process parameter values which meet predetermined ESD constraints; determining an optimum value for at least one other parameter in view of a predetermined design target apart from the predetermined ESD constraints; determining values for fin width (W), gate length (L) and number of fins (N) on the basis of the optimum value; and manufacturing said MuGFET ESD protection device using the given manufacturing and process values.


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