The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Mar. 17, 2004
Chih-chung Chuang, Taipei Hsien, TW;
Shin-jien Kuo, Taipei, TW;
Chao-yun Cheng, Tao-Yuan Hsien, TW;
Shu-feng Wu, Tao-Yuan Hsien, TW;
Chih-Chung Chuang, Taipei Hsien, TW;
Shin-Jien Kuo, Taipei, TW;
Chao-Yun Cheng, Tao-Yuan Hsien, TW;
Shu-Feng Wu, Tao-Yuan Hsien, TW;
AU Optronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention includes the steps of providing a substrate having a main surface; depositing a dual-metal layer such as Mo/AlNd, MoW/AlNd, MoW/Al onto the main surface of the substrate; defining gate and word line patter using a layer of photoresist; and using the photoresist as an etching mask, a first metal dry etching process is carried out to etch the dual-metal layer at an etching selectivity that is significantly higher than prior art. The first metal dry etching process uses oxygen/fluorine containing etching gas mixture and oxygen/chlorine containing etching gas mixture to form the dual-metal gate and word line pattern having slightly oblique sidewalls. End point detection mode detected at 704 nm is used in the first metal dry etching process.