The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Nov. 03, 2006
Shuichi Honda, Kumamoto, JP;
Minoru Yasueda, Kumamoto, JP;
Satoshi Hayashida, Kumamoto, JP;
Masatsugu Yamaguchi, Kumamoto, JP;
Toru Tanaka, Kumamoto, JP;
Shuichi Honda, Kumamoto, JP;
Minoru Yasueda, Kumamoto, JP;
Satoshi Hayashida, Kumamoto, JP;
Masatsugu Yamaguchi, Kumamoto, JP;
Toru Tanaka, Kumamoto, JP;
Chisso Corporation, Osaka, JP;
Abstract
In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.