The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Dec. 27, 2007
Lei He, Pasadena, CA (US);
Lei He, Pasadena, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Methods are described herein which consider both die-to-die and within-die variations in effective channel length, threshold voltage, and gate oxide thickness, based on first developing closed-form models of chip level FPGA leakage and timing variations. Execution times are significantly reduced using these methods in comparison to performing detailed evaluation. The teachings provide mean and standard deviation which were found to be within 3% from those computed by Monte Carlo simulation, while leakage and delay variations can be up to 3× and 1.9×, respectively. Analytical yield models are derived which consider both leakage and timing variations, and use such models to evaluate FPGA device and architecture in response to process variations. The teachings allow improved modeling of leakage and timing yields and thus co-optimization to improve yield rates.